tig062e8 no. a1480-1/5 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. features ? low-saturation voltage. ? low voltage drive (3v). ? enhansment type. ? built-in gate-to-emitter protection diode. ? mounting height 0.9mm, mounting area 8.12mm 2 . ? dv / dt guarantee * . ? halogen free compliance. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-emitter voltage v ces 400 v gate-to-emitter voltage (dc) v ges 6 v gate-to-emitter voltage (pulse) v ges pw1ms 8 v collector current (pulse) i cp 1c m =150 f, v ge =3v 100 a i cp 2c m =100 f, v ge =3.3v 130 a i cp 3c m =100 f, v ge =4v 150 a maximum collector-to-emitter dv / dt dv ce / dt v ce 320v, starting tch=25 c 400 v / s channel temperature tch 150 c storage temperature tstg -40 to +150 c marking : zc * : concerning dv / dt (slope of collector voltage at the time of turn-off), dv / dt > 400v / s will be 100% screen-detected in the circuit shown as fig. 1. ordering number : ena1480a o2109 tk im tc-00002170 / 61009pj ms im tc-00001992 sanyo semiconductors data sheet tig062e8 n-channel igbt light-controlling flash applications www.semiconductor-sanyo.com/network
tig062e8 no. a1480-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector-to-emitter breakdown voltage v (br)ces i c =2ma, v ge =0v 400 v collector-to-emitter cutoff current i ces v ce =320v, v ge =0v 10 + a gate-to-emitter leakage current i ges v ge =6v, v ce =0v 10 + a gate-to-emitter threshold voltage v ge (off) v ce =10v, i c =1ma 0.4 0.9 v collector-to-emitter saturation voltage v ce (sat) i c =100a, v ge =3v 5 8 v input capacitance cies v ce =10v, f=1mhz 2400 pf output capacitance coes v ce =10v, f=1mhz 32 pf reverse transfer capacitance cres v ce =10v, f=1mhz 24 pf package dimensions electrical connection unit : mm (typ) 7011a-004 fig.1 large current r load switching circuit note1. gate series resistance r g 250 1 is recommended for protection purpose at the time of turn off. however, if dv / dt 400v / s is satis ed at customer?s actual set evaluation, r g < 250 1 can also be used. note2. the collector voltage gradient dv / dt must be smaller than 400v / s to protect the device when it is turned off. 87 6 5 12 3 4 top view 1 : emitter 2 : emitter 3 : emitter 4 : gate 5 : collecto r 6 : collecto r 7 : collecto r 8 : collecto r 100k 1 c m r l r g v cc + tig062e8 1 : emitter 2 : emitter 3 : emitter 4 : gate 5 : collector 6 : collector 7 : collector 8 : collector sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view
tig062e8 no. a1480-3/5 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ge gate-to-emitter voltage, v ge -- v collector current, i c -- a case temperature, tc -- c gate-to-emitter cutoff voltage, v ge (off) -- v v ge (off) -- tc case temperature, tc -- c v ce (sat) -- tc collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v cies, coes, cres -- pf cies, coes, cres -- v ce sw time -- i cp switching time, sw time -- ns collector current (pulse), i cp -- a it14698 0 0 25 50 75 125 100 150 it14699 0 0 12 5 7 69 8 34 10 25 50 75 125 100 150 12 4 35 v ge =4.0v 3.0v 2.5v v ce =10v 1.8v it14702 05075 100 125 150 25 --25 --50 6 5 8 7 9 10 11 4 3 2 v ge =4v, i c =150a 3 2 1 it14700 1 10 9 8 7 6 4 5 23456 25 c --25 c i c =100a tc=75 c 25 c 75 c tc= --25 c 4 3 1 2 it14701 1 10 9 8 7 6 5 23456 i c =150a it14703 0 50 75 100 125 150 25 --25 --50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0161820 68 41214 10 2 10 100 7 7 5 3 2 1000 7 5 3 2 5 3 2 it14704 cies coes cres f=1mhz 25 c --25 c tc=75 c v ge =3v, i c =100a v ce =10v i c =1ma 23 57 5 3 2 100 10 it14705 1000 5 3 2 7 5 3 2 7 100 t r t d (off) t d (on) test circuit fig.1 v ge =3v v cc =320v r g =250 1 c m =150 + f pw=50 + s t f
tig062e8 no. a1480-4/5 sw time -- r g switching time, sw time -- ns dv / dt -- r g gate series resistance, r g -- 1 turn off, dv / dt -- v / + s gate series resistance, r g -- 1 i cp -- v ge collector current (pulse), i cp -- a 2456 3 1 0 0 20 40 60 80 100 120 140 160 collector current (pulse)1, i cp 1 -- a maximum capacitor, c m -- + f c m -- i cp 1 20 40 60 80 100 120 140 0 160 50 0 100 150 200 250 300 tc=25 c tc=25 c tc=70 c tc=70 c v ce =320v c m =100 + f v ge =3v v ce =320v gate-to-emitter voltage, v ge -- v collector current (pulse)2, i cp 2 -- a maximum capacitor, c m -- + f c m -- i cp 2 20 40 60 80 100 120 140 0 160 50 0 100 150 200 250 300 tc=25 c tc=70 c v ge =3.3v v ce =320v collector current (pulse)3, i cp 3 -- a maximum capacitor, c m -- + f c m -- i cp 3 20 40 60 80 100 120 140 0 160 50 0 100 150 200 250 300 tc=25 c tc=70 c v ge =4v v ce =320v 23 57 3 2 100 57 1000 it14706 1000 7 7 5 3 5 2 2 3 100 5 3 2 t r t d (off) t d (on) t f test circuit fig.1 v ge =3v v cc =320v i cp =100a c m =150 + f pw=50 + s it14707 200 250 300 350 400 450 500 100 150 50 0 0 200 100 300 400 700 600 500 800 test circuit fig.1 v ge =3v v cc =320v i cp =100a pw=50 + s it14708 it14710 it14709 it14711
tig062e8 no. a1480-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of october, 2009. speci cations and information herein are subject to change without notice. note : tig062e8 has protection diode between gate and emitter but handling it requires suf cient care to be taken.
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